The Gate-type silicon carbide heating element features a horizontal heating zone on top and vertical cold ends on both sides, designed specifically for top or side-wall installation in industrial furnaces. It offers excellent high-temperature mechanical strength and thermal shock resistance, making it ideal for processes requiring large-area, stable radiant heating. Customized solutions (OEM/ODM) are supported.

The Gate-Type Silicon Carbide Heating Element creates a stable, uniform transverse radiant heat field at the furnace bottom or sidewalls. It is ideal for high-temperature applications requiring improved heat distribution in lower or lateral furnace zones.
Made from high-purity α-SiC (≥99% SiC) via a high-temperature silicification and recrystallization process, it forms a robust, grain-bonded structure. The heating zone density is approximately 2.65–2.96 g/cm³, with a long-term operating range of 1400–1550 °C and a maximum temperature of 1625 °C.
Due to its structural stability, uniform heating, and flexible installation, this element is commonly found in high-temperature industrial kilns for glass melting, ceramic sintering, and metallurgical heat treatment.

Product Structure Explanation:
Example: Gate-type, OD=16mm, HZ=300mm, CZ=100mm, denoted as Gate-300×100×16
Note: Contact us for other specifications or customization.

Gate-Type SiC Heating Element Configuration & Furnace Matching
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