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Hexagonal Boron Nitride

Hexagonal Boron Nitride

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Hexagonal Boron Nitride Material Details

Hexagonal boron nitride (h‑BN) is a 1:1 boron‑nitrogen compound. It melts above 3000 °C, remains stable to 2000 °C in inert/vacuum conditions, and resists oxidation up to 900 °C. With resistivity > 10¹² Ω·cm and breakdown voltage up to 30 kV/mm, it provides excellent insulation for high‑frequency circuits and microwave devices. Its thermal conductivity reaches 50 W/(m·K)—among the highest in ceramics—and a friction coefficient of 0.16 offers superior self‑lubrication in high‑temperature, vacuum, or corrosive settings.
Chemically inert, h‑BN withstands strong acids, alkalis, molten metals, and glass. A wide bandgap (~5.9 eV) ensures good UV‑to‑IR transparency for high‑temperature optical windows. Combined with low thermal expansion (7.5×10⁻⁶/°C) and excellent thermal‑shock resistance, it is a key high‑performance material in high‑temperature equipment, metallurgy, aerospace, and other demanding applications.

Hexagonal Boron Nitride (h-BN)--Applications

  1. Electronics: High‑frequency circuits, packaging thermal fillers, high‑voltage insulation—addressing insulation and heat dissipation in high‑power components.
  2. Metallurgy & Chemicals: Release agents for metal forming, high‑temperature crucible linings, corrosion‑resistant coatings—extending equipment life and improving precision.
  3. Aerospace: High‑temperature radome windows, rocket‑engine insulation—ensuring stability under extreme thermal and operational conditions.
  4. Lubrication: A solid lubricant for bearings, gears, seals, and other friction‑prone mechanical parts.
  5. Optics: Good transparency suits optical windows, filters, and high‑temperature equipment like infrared detectors.
  6. Automotive: High‑temperature materials for engine/exhaust components improve heat resistance and reliability; also used as a lubricant additive in friction materials to boost performance.

 

5D-Materials h-BN Advantages

  1. High Production Capacity: Annual output of 5,000 tons ensures stable supply .
  2. High Purity: Products exceed 99% purity​ with low impurities and uniform particle size distribution .
  3. Customization: Tailored particle sizes (3–22 μm) and purity grades (98%–99.5%) available

 

Definition of Hexagonal Boron Nitride:

Hexagonal boron nitride (h‑BN) is a 1:1 boron‑nitrogen compound that melts above 3000 °C, remains stable to 2000 °C in inert/vacuum conditions, and resists oxidation up to 900 °C. Its electrical resistivity exceeds 10¹² Ω·cm with a breakdown voltage of 30 kV/mm, offering excellent insulation for high‑frequency circuits and microwave devices. Thermal conductivity reaches 50 W/(m·K)—among the highest in ceramics—and its low friction coefficient (0.16) provides superior self‑lubrication in high‑temperature, vacuum, or corrosive environments.
Chemically inert, h‑BN withstands strong acids, alkalis, molten metals, and glass. A wide bandgap (~5.9 eV) ensures UV‑to‑IR transparency for high‑temperature optical windows. Combined with low thermal expansion (7.5×10⁻⁶/°C) and excellent thermal‑shock resistance, it serves as a key high‑performance material in demanding applications across high‑temperature equipment, metallurgy, and aerospace.

Hexagonal Boron Nitride Physicochemical properties

Category Category Remarks
Basic Info Chemical formula: BN Layered structure, known as “white graphite”
Molecular weight: 24.82 g/mol
CAS No.: 10043‑11‑5
Crystal structure: Hexagonal
Space group: P6₃/mmc
Mohs hardness: 1.5‑2
Density: 2.1‑2.3 g/cm³
Appearance: White powder or flake crystals
Thermal Properties Melting point: > 3000 °C (decomposes) Excellent thermal‑shock resistance; thermal conductivity is among the highest in ceramics
Boiling point: 3273 °C
 Thermal conductivity: 50 W/(m·K) (anisotropic)
 Thermal expansion coefficient: 7.5 × 10⁻⁶ /°C
Stable in oxidizing atmosphere up to: 900 °C
Stable in vacuum up to: 2000 °C
Electrical Properties Resistivity: > 10¹² Ω·cm Breakdown voltage twice that of alumina; preferred for high‑frequency insulation
Resistivity at 1000 °C: 10⁴‑10⁶ Ω·cm
Breakdown voltage: > 30 kV/mm
Dielectric constant: 3.0‑4.0
Dielectric loss: (2‑8) × 10⁻⁴
Optical & Mechanical Refractive index: 1.80 Transparent from visible to far‑IR; suitable for optical‑window materials; self‑lubricating, ideal for high‑temperature lubrication
Friction coefficient: 0.16
Lubricity: Excellent (similar to graphite)
Chemical Properties Solubility: Insoluble in water, ethanol, ether; slightly soluble in hot acid; insoluble in alkali Strong chemical stability; suitable for complex conditions
Chemical inertness: Resists strong acids/bases; not wetted by most molten metals, glass, or salts

 

Thermal Conductivity Comparison Reference

Material Thermal ConductivityW/mK Relative % (h‑BN = 100%)
Hexagonal Boron Nitride (h‑BN) 50 100%
Alumina (Al₂O₃) 30 60%
Sapphire (Al₂O₃) 40 80%
Silicon Carbide (SiC) 490 980%

Hexagonal Boron Nitride Specifications

Product Model Specification Grade Chemical Properties (Composition / Index) Particle Size Distribution(D10/D50/D90,unit: μm)
h-BN700 CPW06H - BN:99.5% 3.42 / 17.99 / 66.267
- B₂O₃:<0.3%
- T-C:<0.1%
- T-O:<0.5%
- Si/Al/Ca:<30ppm
- Cu/K/Fe/Na/Ni/Cr:<10ppm
- D50:15~22μm
- BET:6~12m²/g
- Tap Density:0.5~0.6g/cm³
h-BN500 CPW-02 - BN:99% 2.32 / 4.38 / 9.31
- B₂O₃:<0.5%
- T-C:<0.05%
- T-O:<0.8%
- Si/Al/Ca:<30ppm
- Cu/K/Fe/Na/Ni/Cr:<10ppm
- D50:3~5μm
- Crystal Size:1~5μm
- BET:12~30m²/g
- Tap Density:0.1~0.3g/cm³
h-BN500 CPW-05 - BN:99% 2.69 / 6.59 / 12.19
- B₂O₃:<0.5%
- T-C:<0.05%
- T-O:<0.8%
- Si/Al/Ca:<30ppm
- Cu/K/Fe/Na/Ni/Cr:<10ppm
- D50:5~8μm
- Crystal Size:1~5μm
- BET:10~20m²/g
- Tap Density:0.4~0.5g/cm³
h-BN500 CPW06H - BN:99% 3.62 / 8.66 / 16.23
- B₂O₃:<0.5%
- T-C:<0.1%
- T-O:<0.8%
- Si/Al/Ca:<30ppm
- Cu/K/Fe/Na/Ni/Cr:<10ppm
- D50:6~9μm
- Crystal Size:1~5μm
- BET:8~15m²/g
- Tap Density:0.4~0.5g/cm³
h-BN300 CPW-12 - BN:98.5% 2.296 / 4.330 / 9.051
- B₂O₃:<0.8%
- T-C:<0.08%
- T-O:<1.2%
- Si/Al/Ca:<30ppm
- Cu/K/Fe/Na/Ni/Cr:<10ppm
- D50:3~5μm
- Crystal Size:1~5μm
- BET:12~30m²/g
- Tap Density:0.1~0.3g/cm³
h-BN100 CPW-10 - BN:98% 3.142 / 13.545 / 53.442
- B₂O₃:<1.6%
- T-C:<0.08%
- T-O:<2%
- Si/Al/Ca:<30ppm
- Cu/K/Fe/Na/Ni/Cr:<10ppm
- D50:13~17μm
- Crystal Size:1~5μm
- BET:12~30m²/g
- Tap Density:0.1~0.3g/cm³

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