Silicon Carbide
Silicon Carbide Material Details
Silicon carbide (SiC) is a high-performance semiconductor and ceramic material formed by strong covalent bonds between silicon and carbon. With a Mohs hardness of 9.2, excellent grinding capability, chemical stability, and resistance to high temperatures/pressures, it is widely used in abrasives, refractories, and semiconductors. Its wide bandgap and unique combination of structural and electronic properties make it a key material for power electronics, RF communications, and optoelectronics, driving advancements in new energy vehicles, 5G, and smart grids.
5D-Silicon Carbide Product Advantages
- High Production Capacity: Annual output of 20,000 tons, covering full specifications (green/black SiC) .
- Semiconductor-Grade Materials: Stable production of high-density SiC grit, micro-powder, overflow-grade, and siphon-grade powders.
- Versatile Ceramic Materials: Supplies powders for pressureless sintering, reaction bonding, and recrystallized SiC ceramics.
- Customization Support: Tailored SiC powders and products with flexible specifications.
Silicon Carbide Applications
- Semiconductors: Power devices, SiC Schottky diodes, RF devices, high‑temperature electronic components.
- Refractories: Kiln rollers, beams, setters, supports, pusher plates, refractory nozzles, radiant tubes.
- Ceramics: Nozzles, SiC brake pads, foam ceramics, ceramic substrates, diesel particulate filters.
- Military: Ballistic plates, armor panels, radar‑absorbing coating fillers.
- Chemical Additives: Used in polymers, coatings, plating solutions, ceramic slurries to enhance performance.
- Abrasion & Polishing: Abrasives for sandpaper, belts, cloths; polishing of glass, stainless steel, gemstones.
- Heating Elements: SiC heating elements (rods) for high‑temperature, clean heating in glass and kiln applications.
Silicon Carbide Definition
Silicon carbide exhibits polytypism, with over 20 crystal structures arising from different stacking sequences; common types include 3C, 15R, 6H, 4H, and 2H. As a wide‑bandgap semiconductor, 6H‑SiC has a room‑temperature bandgap of 3.023 eV (vs. 1.1 eV for Si and 1.4 eV for GaAs). It also provides high thermal conductivity (3.6 W/(m·K) for 6H‑SiC) and a breakdown voltage 10× that of silicon.
Traditional growth methods such as Acheson and Lely yield only small crystals via spontaneous nucleation. Today, Physical Vapor Transport (PVT) is the preferred technique for producing large, high‑quality SiC single crystals. These crystals offer outstanding properties: wide bandgap, high breakdown voltage and thermal conductivity, high electron saturation velocity and mobility, low dielectric constant, and excellent radiation and chemical stability.
Silicon Carbide Physicochemical properties
| Property | Value/Description |
| Chemical Formula | SiC |
| Crystal Structure | Polytypes, primarily 3C-SiC（β-SiC)、4H-SiC、6H-SiC、15R-SiC |
| 3C-SiC：Cubic, lattice constant a=4.36 Å。 Known as“β-SiC”，forms at lower temperatures. | |
| 4H-SiC：Hexagonal, current mainstream substrate for high‑voltage power devices. | |
| 6H-SiC：Hexagonal, used in optoelectronics and some power devices. | |
| 15R-SiC： Rhombohedral. | |
| Density | ~3.21 g/cm³ |
| Mohs Hardness | ~9.2 |
| Melting Point | ~2830°C (under high pressure) |
| Boiling Point | ~ 2700°C (at 1 atm, sublimes) |
| Thermal Conductivity | ~3.7-4.9 W/(cm·K)（4H-SiC） |
| Maximum Operating Temp. | Theoretically >600°C |
| Thermal Expansion Coefficient | Low, 4.0×10⁻⁶ /K（RT to 1000 °C） |
| Chemical Stability | Extremely high; resistant to strong acids, alkalis, and high‑temperature oxidation |
Silicon Carbide specifications
| Micropowder | JIS R6001-1998 | FEPA | ||||||
| SIZE | D3(um) | D50(um) | D94(um) | SIZE | D3 | D50 | D94 | |
| #240 | 103 | 57±3 | 40 | |||||
| #280 | 87 | 48±3 | 33 | F230 | 82 | 53±3 | 34 | |
| #320 | 74 | 40±2.5 | 27 | F240 | 70 | 44.5±2 | 28 | |
| #360 | 66 | 35±2 | 23 | F280 | 59 | 36.5±1.5 | 22 | |
| #400 | 58 | 30±2 | 20 | F320 | 49 | 29.2±1.5 | 16.5 | |
| #500 | 50 | 25±2 | 16 | |||||
| #600 | 43 | 20±1.5 | 13 | F360 | 40 | 22.8±1.5 | 12 | |
| #700 | 37 | 17±1.3 | 11 | F400 | 32 | 17.3±1 | 8 | |
| #800 | 31 | 14±1 | 9 | |||||
| #1000 | 27 | 11.5±1 | 7 | F500 | 25 | 12.8±1 | 5 | |
| #1200 | 23 | 9.5±0.8 | 5.5 | F600 | 19 | 9.3±1 | 3 | |
| #1500 | 20 | 8±0.6 | 4.5 | |||||
| #2000 | 17 | 6.7±0.6 | 4 | F800 | 14 | 6.5±1 | 2 | |
| #2500 | 14 | 5.5±0.5 | 3 | |||||
| #3000 | 11 | 4±0.5 | 2 | F1000 | 10 | 4.5±0.8 | 1 | |
| #4000 | 8 | 3±0.4 | 1.3 | F1200 | 7 | 3±0.5 | 1(80%） | |
| #6000 | 5 | 2±0.4 | 0.8 | F1500 | 5 | 2±0.4 | 0.8(80%） | |
| #8000 | 3.5 | 1.2±0.3 | 0.6 | |||||
| Ultrafine powder | Ultrafine powder for ceramic manufacturing | |||||||
| Particle Size | D50(um) | |||||||
| W5 | 5±0.3 | |||||||
| W3.5 | 3.5±0.3 | |||||||
| W1.0 | 0.8±0.1 | |||||||
| W0.2 | 0.2±0.1 | |||||||
| Coarse grit | Specification | |||||||
| F4-F220 | ||||||||
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